In situ determination of nitrogen content in InGaAsN quantum wells

Simultaneous determination of indium and nitrogen contents of InGaAsN quantum wells by optical in situ monitoring

Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells

Differences in sample quality and nitrogen incorporation in InGaAsN quantum well samples grown by metal-organic vapor phase epitaxy using either H2 or N2 as the carrier gas are studied by several ex situ methods. The nitrogen incorporation increases while the indium content and the growth rate of the quantum wells decrease when using N2 as the carrier gas instead of H2. Also, the hydrogen incor...

Title: In situ determination of nitrogen content in InGaAsN quantum wells

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Differential Gain and Linewidth-Enhancement Factor in Dilute-Nitride GaAs-Based 1.3-μm Diode Lasers

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilutenitride GaAs-based near 1.3-μm lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the ra...

Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers

We report a comparative study of carrier dynamics in semiconductor saturable absorber mirrors (SESAMs) containing InGaAs quantum wells and InGaAsN quantum wells (QWs). The static and dynamic reflectivity spectra were measured with a Fourier-transform-infraredspectrometer and a pump-probe setup, respectively. The influence of rapid thermal annealing (RTA) on carrier dynamics was studied. Due to ...